Published May 8, 1995 | Version v1
Journal article

The effects of defect system ordering in a weakly doped incipient ferroelectric (KTaO3): dielectric manifestation

  • 1. A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg (Russian Federation)

Description

The temperature-frequency behaviour of the permittivity ε '(T, f) and tan(δ (T, f)) (20-300 K; 120 Hz-9 MHz), EPR, optical absorption and luminescence of KTaO3 nominally pure and weakly doped (0.1 wt% Li; 0.01 wt% Cr; 3 wt% Cu; 1 wt% Fe; 0.1 wt% Li+0.1 wt% Cr and 0.1 wt% Li+0.1 wt% Cr+0.02 wt% Cu) were studied. Below 70 K, in all doped samples, dielectric dispersion occurs, with tan(δ (T)) maxima positions obeying the universal Arrhenius law with activation energy Δ = 1000±50 K. This is associated with local ordering in the dipole-dipole clusters containing reorienting defect pairs of various kinds, with correlations due to interaction via the TO soft mode. (author)

Availability note (English)

Available online at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
7
Journal Issue
19
Journal Page Range
p. 3765-3777
ISSN
0953-8984