Published August 1996 | Version v1
Journal article Metadata-only

Effects of radiation-induced oxide and interface charges on mobility degradation in MOSFETs

Creators

  • 1. Xinjiang Inst. of Physics, the Chinese Academy of Sciences, Urumqi (China)

Description

The model separating the effects of radiation-induced oxide-trapped charge and interface state charge on mobility can well manifest the mechanisms of the radiation induced mobility degradation in NMOSFET and PMOSFET. The comparison between the model and the experiment shows that the Coulomb scattering role of interface defects to hole is larger than to electrons

Additional details

Publishing Information

Journal Title
Nuclear Science and Techniques
Journal Volume
7
Journal Issue
3
Journal Page Range
p. 183-186.
ISSN
1001-8042
CODEN
NSETEC

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
28002174
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
CHARGE DISTRIBUTION; CHARGE STATES; COBALT 60; COMPARATIVE EVALUATIONS; COULOMB SCATTERING; DOSE-RESPONSE RELATIONSHIPS; ELECTRIC CHARGES; GAMMA RADIATION; MATHEMATICAL MODELS; MOBILITY; MOSFET; PHYSICAL RADIATION EFFECTS
Descriptors DEC
BASIC INTERACTIONS; BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; COBALT ISOTOPES; ELASTIC SCATTERING; ELECTROMAGNETIC INTERACTIONS; ELECTROMAGNETIC RADIATION; EVALUATION; FIELD EFFECT TRANSISTORS; INTERACTIONS; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTOPES; IONIZING RADIATIONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MINUTES LIVING RADIOISOTOPES; MOS TRANSISTORS; NUCLEI; ODD-ODD NUCLEI; RADIATION EFFECTS; RADIATIONS; RADIOISOTOPES; SCATTERING; SEMICONDUCTOR DEVICES; TRANSISTORS; YEARS LIVING RADIOISOTOPES