Atomic-scale imaging and the effect of yttrium on the fracture toughness of silicon carbide ceramics
- 1. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)
- 2. Department of Materials Science and Engineering, University of California, Berkeley, CA 94720 (United States)
- 3. National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)
Description
In SiC sintered with Al, B and C additions (ABC-SiC), the presence of Y in the Al-Si-O-C grain-boundary phase leads to less frequent crack deflection and lower toughness. When Y is absent from the grain-boundary phase and remains in the triple pockets, crack deflection is restored, and higher toughness results from grain-bridging mechanisms. The observations are consistent with elastic modulus changes in the intergranular phase, which depend on their yttria and silica content, and indicate that these can play an important role in determining crack deflection. While high-toughness ceramics such as ABC-SiC and Si3N4 rely on sintering additives forming crack-deflecting intergranular films, the present case is a striking example where the presence of a segregant in the grain boundary promotes transgranular fracture by raising the modulus of the nanoscale intergranular grain-boundary film.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.actamat.2010.01.031Additional details
Identifiers
- DOI
- 10.1016/j.actamat.2010.01.031;
- PII
- S1359-6454(10)00045-5;
Publishing Information
- Journal Title
- Acta Materialia
- Journal Volume
- 58
- Journal Issue
- 8
- Journal Page Range
- p. 2999-3005
- ISSN
- 1359-6454
- CODEN
- ACMAFD
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43039234
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ADDITIVES; CERAMICS; CRACKS; DOPED MATERIALS; FILMS; FRACTURE PROPERTIES; FRACTURES; GRAIN BOUNDARIES; NANOSTRUCTURES; SILICA; SILICON CARBIDES; SILICON NITRIDES; SINTERING; YTTRIUM; YTTRIUM OXIDES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHALCOGENIDES; ELEMENTS; FABRICATION; FAILURES; MATERIALS; MECHANICAL PROPERTIES; METALS; MICROSTRUCTURE; MINERALS; NITRIDES; NITROGEN COMPOUNDS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; YTTRIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.