Surface effects on the magnetic properties of Co2FeAl(0 0 1): An ab initio study
- 1. State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China)
- 2. Department of Applied Physics, Xi'an Jiaotong University, Xi'an 710049 (China)
Description
Electronic structures of the Co2FeAl(0 0 1) surface are studied theoretically via first-principles calculations based on density functional theory. It is found that the minority spin band gap at the Fermi level in bulk Co2FeAl disappears at the surface due to space localization of the states. However, beneath the surface, the density of states of individual atoms shows a trend of minority spin gap opening at the Fermi level, which indicates that the electronic structures become close to that of bulk Co2FeAl. The termination of FeAl is more favorable for spin polarization of Co2FeAl films than that of Co. Accordingly, we present a composite tri-layer model to illustrate the fading of the half-metallic property in Co2FeAl films against the ideal character in bulk materials.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jmmm.2010.06.024Additional details
Identifiers
- DOI
- 10.1016/j.jmmm.2010.06.024;
- PII
- S0304-8853(10)00405-1;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 322
- Journal Issue
- 21
- Journal Page Range
- p. 3351-3354
- ISSN
- 0304-8853
- CODEN
- JMMMDC
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42048900
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM ALLOYS; COBALT ALLOYS; DENSITY FUNCTIONAL METHOD; ELECTRONIC STRUCTURE; FERMI LEVEL; FILMS; IRON ALLOYS; LAYERS; MAGNETIC PROPERTIES; SPIN ORIENTATION; SURFACES
- Descriptors DEC
- ALLOYS; CALCULATION METHODS; ENERGY LEVELS; ORIENTATION; PHYSICAL PROPERTIES; TRANSITION ELEMENT ALLOYS; VARIATIONAL METHODS
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.