Published October 1988
| Version v1
Journal article
Deposition of In2 O3:Sn thin films by reactive evaporation
- 1. Instituto Militar de Engenharia (IME), Rio de Janeiro, RJ (Brazil)
Description
In2 O3:Sn (ITO) thin films were obtained by reactive evaporation method from In-Sn alloy in the presence of ionized oxygen. The properties of films were investigated as function of the temperature of substrate. Measures of Hall effect were carried out to characterize electrical properties. Measures of transmittance were done for optical analysis and the crystallinity was observed by electron diffraction technique. (M.C.K.)
Additional details
Additional titles
- Original title (Portuguese)
- Deposicao de filmes finos de In
Publishing Information
- Journal Title
- Revista Brasileira de Aplicacoes de Vacuo
- Journal Volume
- 8
- Journal Issue
- 1-2
- Journal Page Range
- p. 19-22.
- ISSN
- 0101-7659
- CODEN
- RBAVEP
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 24058144
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DEPOSITION; ELECTRICAL PROPERTIES; ELECTRON DIFFRACTION; EVAPORATION; HALL EFFECT; INDIUM; OXYGEN; TEMPERATURE DEPENDENCE; THIN FILMS; TIN
- Descriptors DEC
- COHERENT SCATTERING; DIFFRACTION; ELEMENTS; FILMS; METALS; NONMETALS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; SCATTERING