Achieving a narrow size distribution of Au particles at a precise depth in SiO2 by segregation of Au precipitates
- 1. Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia)
Description
We propose a new method of confining Au nanoparticles of a narrow size distribution at a precise depth in an SiO2 matrix. The process involves the formation of nanocavities in silicon by hydrogen implantation and annealing (at 850 deg. C), followed by Au gettering to and precipitation in such cavities and a wet oxidation at 900 deg. C. Starting with a silicon-on-insulator wafer, Au precipitates can be segregated behind a growing Si/SiO2 interface during wet oxidation and ultimately trapped in SiO2 at the front interface of a buried oxide layer. The shape of the precipitates has been examined by transmission electron microscopy and found to be spherical. The average diameters of these precipitates before and after oxidation have been determined as around 15 nm and 30 nm, respectively.
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-4484/20/18/185603Additional details
Identifiers
- DOI
- 10.1088/0957-4484/20/18/185603;
- PII
- S0957-4484(09)02466-0;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 20
- Journal Issue
- 18
- Journal Page Range
- [6 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41012243
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ANNEALING; GETTERING; GOLD; HYDROGEN; INTERFACES; NANOSTRUCTURES; OXIDATION; PRECIPITATION; SEGREGATION; SILICON; SILICON OXIDES; TEMPERATURE RANGE 1000-4000 K; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL REACTIONS; ELECTRON MICROSCOPY; ELEMENTS; HEAT TREATMENTS; METALS; MICROSCOPY; NONMETALS; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SEPARATION PROCESSES; SILICON COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENTS