Published November 1, 1981
| Version v1
Journal article
Effect of preferential population of quantum states in angular distributions of 4.9 MeV electrons under planar channeling conditions in silicon
Creators
- 1. Tomskij Politekhnicheskij Inst. (USSR). Inst. Yadernoj Fiziki, Ehlektroniki i Avtomatiki
Description
A detailed analysis of angular distributions of electrons transmitted through Si crystals under planar channeling conditions is carried out. The population probabilities of the quantum states, the accurate angular distributions of electrons in the individual quantum states, and also the total angular distributions for channeled electrons are calculated. The comparison of calculated and measured values exhibits clearly the orientational effect of the predominant population of the individual quantum states
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi B
- Journal Volume
- 108
- Journal Issue
- 1
- Series
- Phys. Status Solidi B.
- Journal Page Range
- K47-K51
- ISSN
- 0370-1972
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 13672870
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANGULAR DISTRIBUTION; ELECTRON BEAMS; ELECTRON CHANNELING; ENERGY LEVELS; ENERGY SPECTRA; ENERGY-LEVEL DENSITY; MEV RANGE 01-10; ORIENTATION; POTENTIALS; PROBABILITY; SILICON
- Descriptors DEC
- BEAMS; CHANNELING; DISTRIBUTION; ELEMENTS; ENERGY RANGE; LEPTON BEAMS; MEV RANGE; PARTICLE BEAMS; SEMIMETALS; SPECTRA
Optional Information
- Notes
- Short note.