The diamond films grown by chemical vapor-gas deposition method on different substrates

For investigation of influence of growth conditions on the properties of diamond films grown on different substrates, the CVD reactor was worked out and the diamond films were grown on silicon and silicon carbide substrates. Three types of films were obtained in dependence on substrate temperature. It is shown that the qualitative films were obtained at the temperature range of 800-900 degree C. The films grown on silicon and silicon carbide substrates have polycrystalline structure with thickness of grains 1-3 micrometers, p-type conductivity, the density of current carriers -2x1018cm-3 and electron mobility of 130-160 cm2/V·s. The results obtained show that the grown films have a good quality(authors).