Shape deformation induced enhancement of ferromagnetism in δ-(Ga, Mn)As
Creators
- 1. College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 211100 (China)
- 2. Department of Applied Physics, University of Science and Technology of Suzhou, Suzhou 215011 (China)
- 3. Department of Physics, Bohai University, Jinzhou 121013 (China)
Description
Highlights: • Shape deformation do enhance the exchange energy of δ-(Ga,Mn)As • We pay attention to the way increasing exchange energy • Tc is gotten comparing to experimental results, not only exchange energy. - Abstract: Using density functional calculations, the mechanism of enhancement of exchange energy of δ-(Ga, Mn)As with shape deformation was elucidated. The initial Tc was 250 K with exchange energy 395 meV, thereafter Tc could be obtained as 308 K with a higher exchange energy when deformation was considered. Lattice constant variation in the z-direction (perpendicular to the Mn layer) had a significant effect on the exchange energy, while that in the x- or y-direction would not. Compared with pure GaAs, the anti-ferromagnetic (AFM) energy of δ-(Ga, Mn)As changed abnormally with shape deformation. Enhancement of this exchange energy could mainly be attributed to the high, narrow AFM t2g peak on the Fermi surface with shape deformation. These findings shed new light on the physics underpinning the design of dilute magnetic semiconductors with shape deformation for spintronic applications
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physleta.2014.05.006Additional details
Identifiers
- DOI
- 10.1016/j.physleta.2014.05.006;
- PII
- S0375-9601(14)00478-2;
Publishing Information
- Journal Title
- Physics Letters. A
- Journal Volume
- 378
- Journal Issue
- 30-31
- Journal Page Range
- p. 2234-2238
- ISSN
- 0375-9601
- CODEN
- PYLAAG
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47008883
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; COMPARATIVE EVALUATIONS; DEFORMATION; DENSITY FUNCTIONAL METHOD; DESIGN; FERMI LEVEL; FERROMAGNETISM; GALLIUM ARSENIDES; LATTICE PARAMETERS; LAYERS; MAGNETIC SEMICONDUCTORS; MANGANESE ARSENIDES; MEV RANGE 100-1000; PEAKS; SHAPE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CALCULATION METHODS; ENERGY LEVELS; ENERGY RANGE; EVALUATION; GALLIUM COMPOUNDS; MAGNETISM; MANGANESE COMPOUNDS; MATERIALS; MEV RANGE; MICROSCOPY; PNICTIDES; SEMICONDUCTOR MATERIALS; TRANSITION ELEMENT COMPOUNDS; VARIATIONAL METHODS
Optional Information
- Copyright
- Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.