Published June 1999 | Version v1
Journal article Metadata-only

Growth of A2B6 compound films under highly nonequilibrium conditions

Creators

  • 1. RAN, Inst. Problem Mashinovedeniya, Sankt-Peterburg (Russian Federation)
  • 2. Sankt-Peterburgskij Gosudarstvennyj Tekhnologicheskij Inst., Sankt-Peterburg (Russian Federation)

Description

Regularities of origination and growth of semiconducting films in vacuum on monocrystal and amorphous substrates at 77-273 K are considered. The films condensation diagrams of epitaxial films growth are established for the first time. It is shown that by the epitaxial film growth a dense adsorption layer is formed on the substrate, the effective temperature whereof is essentially higher as compared to that of the substrate. The initial growth stages are studied

Abstract (Russian)

Рассмотрены закономерности зарождения и роста полупроводниковых пленок в вакууме на монокристаллических и аморфных подложках при температурах подложек 77-273 K. Построены диаграммы конденсации пленок и впервые установлены две низкотемпературные области роста эпитаксиальных пленок. Установлено, что при эпитаксиальном росте пленок на подложке образуется плотный адсорбционный слой, эффективная температура которого значительно выше температуры подложки. Исследованы начальные стадии роста

Additional details

Additional titles

Original title (Russian)
Рост пленок соединений А

Publishing Information

Journal Title
Neorganicheskie Materialy
Journal Volume
35
Journal Issue
6
Journal Page Range
p. 657-660
ISSN
0002-337X
CODEN
NEOMB8

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
31034958
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ADSORPTION; CADMIUM TELLURIDES; EPITAXY; FILMS; GLASS; PHASE STUDIES; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE RANGE 0065-0273 K; VACUUM COATING
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; DEPOSITION; MATERIALS; SORPTION; SURFACE COATING; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE

Optional Information

Notes
8 refs., 4 figs.