Mechanical stresses in ion implanted Mo-Si films

Internal mechanical stresses in ion implanted Mo-Si films have been studied by the X-ray diffraction method (B+, E=60 keV, and N+, E=150 keV). it is established that stress value in irradiated films depends on implantation dose, type and energy of ions as well as its location relative to Mo-Si interface. High dose implantation induced stresses are over the yield strength value and cause partial stress relaxation in the course of implantation. Thermal annealing in the temperature range of 673-1373 K also leads to stress relaxation due to generation of dislocations, diffusion of defects, growth of phases and upper Si film exfoliation