Published February 2011 | Version v1
Journal article Metadata-only

Influence of Si-doping on the characteristics of InGaGdN/GaN MQWs grown by MBE

Creators

  • 1. Faculty of Electrical and Electronic Engineering, Tun Hussein Onn University of Malaysia, 86400 Parit Raja, Batu Pahat Johor (Malaysia)
  • 2. The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

Description

We report the investigation on the effects of Si-doping in the GaN barrier layers of InGaGdN/GaN multiple-quantum wells (MQWs) prepared by the molecular-beam epitaxy. X-ray diffraction results exhibit improved crystal and interfacial qualities for the Si-doped barrier samples as compared to the undoped barrier sample. The magnetic properties measured with the superconducting quantum interference device magnetometer indicate clear hysteresis and enhanced saturation magnetization with the increase of Si cell temperature for all the Si-doped barrier MQW samples. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.201000484

Additional details

Identifiers

DOI
10.1002/pssc.201000484;

Publishing Information

Journal Title
Physica Status Solidi. C, Current Topics in Solid State Physics (Online)
Journal Volume
8
Journal Issue
2
Journal Page Range
p. 491-493
ISSN
1610-1642

Conference

Title
37. international symposium on compound semiconductors (ISCS 2010)
Dates
31 May - 4 Jun 2010
Place
Kagawa (Japan)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
42032756
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ABSORPTION SPECTROSCOPY; DOPED MATERIALS; GADOLINIUM NITRIDES; GALLIUM NITRIDES; INDIUM NITRIDES; LAYERS; MAGNETIZATION; MAGNETOMETERS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; QUANTUM WELLS; SILICON ADDITIONS; SOLID CLUSTERS; SQUID DEVICES; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY
Descriptors DEC
ALLOYS; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRONIC EQUIPMENT; EPITAXY; EQUIPMENT; FLUXMETERS; GADOLINIUM COMPOUNDS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; MEASURING INSTRUMENTS; MICROWAVE EQUIPMENT; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; RARE EARTH COMPOUNDS; SCATTERING; SILICON ALLOYS; SPECTROSCOPY; SUPERCONDUCTING DEVICES

Optional Information

Notes
With 5 figs., 7 refs.