Published 2005
| Version v1
Journal article
Optical centres with local vibrational modes created by high temperature annealing of electron irradiated 4H and 6H silicon carbide
- 1. Dept. of Physics, Univ. of Bristol (United Kingdom)
- 2. Dept. of Electrical, Electronic and Computer Engineering, Univ. of Newcastle (United Kingdom)
Description
New results are presented concerning several optical centres having local vibrational modes in electron irradiated and annealed 4H and 6H SiC. Some of these centres are common to both polytypes, others have only been found in 6H SiC. They appear, typically, after annealing in the range 1000 C-1300 C. Additional results have been obtained about mode splitting from 13C isotope enriched 6H SiC. (orig.)
Additional details
Publishing Information
- Journal Title
- Materials Science Forum
- Journal Volume
- 483-485
- Journal Page Range
- p. 347-350
- ISSN
- 0255-5476
- CODEN
- MSFOEP
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- Switzerland
- INIS RN
- 36071916
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; ELECTRON COLLISIONS; EMISSION SPECTRA; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; SILICON CARBIDES; SPECTRAL SHIFT; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 1000-4000 K; VIBRATIONAL STATES; VISIBLE SPECTRA
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; COLLISIONS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; EMISSION; ENERGY LEVELS; EXCITED STATES; HEAT TREATMENTS; LUMINESCENCE; PHOTON EMISSION; RADIATION EFFECTS; SILICON COMPOUNDS; SPECTRA; TEMPERATURE RANGE