Published March 16, 2015 | Version v1
Journal article

Defect-engineered GaN:Mg nanowire arrays for overall water splitting under violet light

  • 1. Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9 (Canada)
  • 2. Science des Matériaux, IREQ, Hydro-Québec 1800 Boul. Lionel-Boulet, Varennes, Quebec J3X 1S1 (Canada)
  • 3. Department of Physics, Centre for the Physics of Materials, McGill University, 3600 University Street, Montreal, Quebec H3A 2T8 (Canada)

Description

We report that by engineering the intra-gap defect related energy states in GaN nanowire arrays using Mg dopants, efficient and stable overall neutral water splitting can be achieved under violet light. Overall neutral water splitting on Rh/Cr2O3 co-catalyst decorated Mg doped GaN nanowires is demonstrated with intra-gap excitation up to 450 nm. Through optimized Mg doping, the absorbed photon conversion efficiency of GaN nanowires reaches ∼43% at 375–450 nm, providing a viable approach to extend the solar absorption of oxide and non-oxide photocatalysts

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
106
Journal Issue
11
Journal Page Range
p. 113105-113105.5
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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