Stability of concentration-related self-interstitial atoms in fusion material tungsten
- 1. Key Laboratory of Advanced Technology of Materials, Superconductivity and New Energy R and D Center, Southwest JiaoTong University, Chengdu 610031 (China)
- 2. Fusion Science of Southwestern Institute of Physics, Chengdu 610041 (China)
Description
Based on the density functional theory, we calculated the structures of the two main possible self-interstitial atoms (SIAs) as well as the migration energy of tungsten (W) atoms. It was found that the difference of the 〈110〉 and 〈111〉 formation energies is 0.05–0.3 eV. Further analysis indicated that the stability of SIAs is closely related to the concentration of the defect. When the concentration of the point defect is high, 〈110〉 SIAs are more likely to exist, 〈111〉 SIAs are the opposite. In addition, the vacancy migration probability and self-recovery zones for these SIAs were researched by making a detailed comparison. The calculation provided a new viewpoint about the stability of point defects for self-interstitial configurations and would benefit the understanding of the control mechanism of defect behavior for this novel fusion material. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-1056/25/5/056102Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics. B
- Journal Volume
- 25
- Journal Issue
- 5
- Journal Page Range
- [4 p.]
- ISSN
- 1674-1056
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49017127
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ATOMS; CONCENTRATION RATIO; DENSITY FUNCTIONAL METHOD; FORMATION HEAT; INTERSTITIALS; MATERIALS RECOVERY; MIGRATION; SILICON ARSENIDES; STABILITY; TUNGSTEN; VACANCIES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CALCULATION METHODS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONLESS NUMBERS; ELEMENTS; ENTHALPY; MANAGEMENT; METALS; PHYSICAL PROPERTIES; PNICTIDES; POINT DEFECTS; PROCESSING; REACTION HEAT; REFRACTORY METALS; SILICON COMPOUNDS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENTS; VARIATIONAL METHODS; WASTE MANAGEMENT; WASTE PROCESSING