Influence of isochronous high-temperature annealing on the structure of SOx thin films

The influence of isochronous annealing on structure of thin tin dioxide films deposited on polycrystalline corundum substrates has been studied. The films thickness with 200-250 nm were prepared in argon-oxygen atmosphere with a rate of 1.5-2.0 nm/min at substrate temperature about 200 deg. C. The samples were annealed in air in the temperature range of (550-1200 grad. C) for 1 hour. Data X-ray investigation showing the changes of structure properties were obtained and an estimation of the SnO2 crystalline average sizes was made. (author)