Published December 1, 2018 | Version v1
Journal article

Investigation of Statistical Broadening in InGaN Alloys

  • 1. Ioffe Institute, 26 Politekhnicheskaya, 194021 St. Petersburg (Russian Federation)
  • 2. Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS, 26 Politekhnicheskaya, 194021 St. Petersburg (Russian Federation)

Description

Optical and structural properties of thick InGaN layers grown by MOCVD and MBE were studied by photoluminescence, optical transmission and Raman spectroscopies and X-ray diffraction analysis. Optical bandgap, Urbach energy, and full widths at half maximum (FWHM) of photoluminescence and Raman spectra depending on the InGaN alloy composition were determined experimentally. Minimal theoretical linewidth of photoluminescence spectra resulted from random distribution of In and Ga atoms in cation sublattice was calculated. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/1135/1/012050

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
1135
Journal Issue
1
Journal Page Range
[5 p.]
ISSN
1742-6596

Conference

Title
International Conference PhysicA.SPb/2018
Dates
23-25 Oct 2018
Place
Saint Petersburg (Russian Federation)