Preparation and certification of ion-implanted reference materials: a critical review

The preparation and certification of ion-implanted reference materials is critically evaluated and information is provided for the analyst to specify and query conditions of ion implantation and certification. The information consists of (1) discussion of ion implantation generally, of quantitative ion implantation in particular, and of the differences between theoretical, as-implanted, and as-measured depth distributions, and (2) data on sputtering yields, limiting dose densities for quantitative ion implantation, concentrations at the distribution maximum and at the surface, for implantants (analytes) and host materials with atomic numbers between 10 and 80, for implantation energies between 10 and 300 keV. A nomenclature is introduced which provides for the special requirements of certification of ion-implanted reference materials. (author)