Published April 1995
| Version v1
Journal article
Surface-barrier CdS structures with an intermediate thin variable layer
- 1. AN Ukrainskoj SSR, Kiev (Ukraine). Nauchnyj Sovet po Probleme Fizika Poluprovodnikov
Description
To optimize parameters of surface-barrier structure on CdS basis it is suggested to use (ZnSe)x(CdS)1-x thin intermediate variband layer. Application of the given layers enables to reduce dark diode currents by 2 times. The structures are characterized by high efficiency within nearest ultra-violet range. 12 refs.; 2 figs
Additional details
Additional titles
- Original title (Russian)
- Поверхностно-барьерные структуры CdS с промежуточным тонким варизонным слоем
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 29
- Journal Issue
- 4
- Journal Page Range
- p. 750-753.
- ISSN
- 0015-3222
- CODEN
- FTPPA4
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 26078901
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CADMIUM SULFIDES; COPPER SULFIDES; ELECTRIC CONDUCTIVITY; ELECTRON DENSITY; ELECTRONIC STRUCTURE; HOLES; NEAR ULTRAVIOLET RADIATION; PHOTOSENSITIVITY; SPACE CHARGE; SUBSTRATES; SURFACE BARRIER DETECTORS; THIN FILMS; ZINC SELENIDES
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; COPPER COMPOUNDS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; FILMS; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; RADIATION DETECTORS; RADIATIONS; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR DETECTORS; SENSITIVITY; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ULTRAVIOLET RADIATION; ZINC COMPOUNDS