Published December 3, 2007 | Version v1
Journal article

Investigation of the low dielectric siloxane-based hydrogen silsesquioxane (HSQ) as passivation layer on TFT-LCD

  • 1. Institute of Electronics Engineering, National Tsing Hua University, Hsin-Chu, Taiwan (China)
  • 2. Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 70 Lien-hai Rd., Kaohsiung, Taiwan (China)
  • 3. Department of Physics and Institute of Electro-Optical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China)
  • 4. National Nano Device Laboratory, 1001-1 Ta-Hsueh Rd., Hsin-Chu, Taiwan (China)
  • 5. Department of Photonics and Display Institute, National Chiao Tung University, Hsin-Chu, Taiwan (China)

Description

Spin-on low-k passivation is achieved on inverted-staggered back-channel-etched hydrogenated amorphous silicon thin-film transistors (TFT). The low-k passivation material, siloxane-based hydrogen silsesquioxane (HSQ), has been investigated for different process temperatures. Performance is improved with decreased temperature. At 300 deg. C, the TFT performance of HSQ passivation is superior to those of other TFTs. The hydrogen bonds of HSQ assist hydrogen incorporation to eliminate the density of states between the back channel and the passivation layer. The characteristics of HSQ passivated TFT have been studied in this work

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2007.08.014

Additional details

Identifiers

DOI
10.1016/j.tsf.2007.08.014;
PII
S0040-6090(07)01406-X;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
516
Journal Issue
2-4
Journal Page Range
p. 374-377
ISSN
0040-6090
CODEN
THSFAP

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39071276
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
DIELECTRIC MATERIALS; HYDROGEN; LAYERS; ORGANIC OXYGEN COMPOUNDS; PASSIVATION; SILICON; SPIN-ON COATING; THIN FILMS
Descriptors DEC
DEPOSITION; ELEMENTS; FILMS; MATERIALS; NONMETALS; ORGANIC COMPOUNDS; SEMIMETALS; SURFACE COATING

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.