Published July 1999 | Version v1
Journal article Metadata-only

Electrical properties of nuclear-doped indium antimonide

Creators

  • 1. Atomic Energy Institute, 249020 Obninsk (Russian Federation)
  • 2. Branch of the State Scientific Center L.Ya. Karpov Physicochemical Scientific-Research Institute, 249020 Obninsk (Russian Federation)

Description

The possibility of nuclear doping of indium antimonide over a wide range of concentrations (5x1014-1018 cm-3) by irradiation with reactor neutrons is investigated; the effect of irradiation and subsequent heat treatments on the electrical parameters of the material is investigated. A comparative analysis of the quality of nuclear-doped and conventional InSb is used to demonstrate the possibility of the practical use of this nuclear-doped material

Additional details

Identifiers

DOI
10.1134/1.1187766;
PII
S1063-7826(99)00307-5;

Publishing Information

Journal Title
Semiconductors
Journal Volume
33
Journal Issue
7
Journal Page Range
p. 712-715
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35051845
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
CRYSTAL DOPING; ELECTRIC CONDUCTIVITY; EXPERIMENTAL DATA; HEAT TREATMENTS; INDIUM ANTIMONIDES; ION IMPLANTATION; NEUTRON BEAMS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; THEORETICAL DATA
Descriptors DEC
ANTIMONIDES; ANTIMONY COMPOUNDS; BEAMS; DATA; ELECTRICAL PROPERTIES; INDIUM COMPOUNDS; INFORMATION; MATERIALS; NUCLEON BEAMS; NUMERICAL DATA; PARTICLE BEAMS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 33, 774-777 (July 1999); (c) 1999 American Institute of Physics.