Published January 2009
| Version v1
Journal article
The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field
- 1. Academy of Sciences of Republic of Uzbekistan, Physicotechnical Institute (Uzbekistan)
- 2. Namangan Engineering-Pedagogical Institute (Uzbekistan)
Description
The effect of heating of electrons and holes on the nonideality coefficient of the current-voltage characteristic for a p-n junction in a high microwave field is studied. It is established that the nonideality coefficient for a diode depends on the type of charge carriers that make the major contribution to the current in the p-n junction. It is shown that, in some cases in silicon samples, the nonideality coefficient for the diode is governed by the temperature for holes in spite of the fact that the temperature for electrons is higher than the temperature for holes.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 43
- Journal Issue
- 1
- Journal Page Range
- p. 47-51
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41011280
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHARGE CARRIERS; CURRENTS; ELECTRIC POTENTIAL; ELECTRONS; HEATING; HOLES; MICROWAVE RADIATION; P-N JUNCTIONS; SILICON
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; LEPTONS; RADIATIONS; SEMICONDUCTOR JUNCTIONS; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2009 Pleiades Publishing, Ltd.