Published February 28, 2005 | Version v1
Journal article

First steps in the growth of Cu thin films on the five-fold surface of the icosahedral Al-Cu-Fe quasicrystal

  • 1. SORST, Japan Science and Technology Agency (Japan)
  • 2. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)
  • 3. LSG2M, CNRS-UMR7584, Ecole des Mines, Parc de Saurupt, 54042 Nancy (France)
  • 4. Department of Materials Science and Engineering, Ames Laboratory, Iowa 50011 (United States)
  • 5. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai, 980-8577 (Japan)

Description

The growth of Cu on the five-fold surface of the icosahedral Al-Cu-Fe is investigated by scanning tunneling microscopy. The clean surface exhibits atomically flat terraces separated by steps of different heights. The steps are found to be frequently bunched. For a coverage close to a monolayer, Cu forms a nearly closed film of a height corresponding to a monolayer of Cu. The film, however, does not exhibit long-range order

Additional details

Identifiers

DOI
10.1016/j.apsusc.2004.09.042;
PII
S0169-4332(04)01404-7;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
241
Journal Issue
1-2
Journal Page Range
p. 256-260
ISSN
0169-4332
CODEN
ASUSEE

Conference

Title
9. international symposium on advanced physical fields
Acronym
APF-9
Dates
1-4 Mar 2004
Place
Tsukuba (Japan)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38060551
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM ALLOYS; COPPER ALLOYS; EPITAXY; IRON ALLOYS; SCANNING TUNNELING MICROSCOPY; SURFACES; THIN FILMS
Descriptors DEC
ALLOYS; CRYSTAL GROWTH METHODS; FILMS; MICROSCOPY; TRANSITION ELEMENT ALLOYS

Optional Information

Copyright
Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.