Published 1972
| Version v1
Book
Crystal defects and electrical properties in ion-implanted silicon
Creators
Description
no abstract available
Additional details
Publishing Information
- Publisher
- Springer-Verlag New York, Inc.
- Imprint Place
- New York
- Imprint Title
- Ion Implantation in Semiconductors
- Imprint Pagination
- p. 96-102.
Conference
- Title
- 2. international conference on ion implantation in semiconductors.
- Dates
- 24 May 1971.
- Place
- Garmisch-Partenkirchen, Germany.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 3029832
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BORON IONS; CRYSTAL DEFECTS; DOPED MATERIALS; ELECTRICAL PROPERTIES; ION IMPLANTATION; KEV RANGE 100-1000; LAYERS; NEON IONS; PHOSPORUS IONS; SILICON
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL STRUCTURE; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; PHYSICAL PROPERTIES; SEMIMETALS