Photoelectrical properties of indium arsenide doped with S and Mg at 350 keV

Investigated are spectral dependences of photoemf at 100 K and optical absorption at 300 and 100 K within lambda=0.5-5.0 mkm wave length of InAs of the n- and p-type before and after implantation of S and Mg ions, as well as after annealing at 450 deg and 600 deg C. It is stated that S ion implantation with the energy up to 350 keV at 1014-8x1014 cm-2 doses and consequent annealing at 450-600 dea C causes n-p- structure formation, with photosensitivity in 0.6-4 mkm region. Investigation of absorption spectra near the edge of the main absorption band permits to suppose, that S ion implantation at the doses > 1014 cm-2 makes InAs of the p-type amorphous. Ma ion implantation with 350 keV at 8x1014cm-2 doses in the n-type and the succeeding annealing do not bring about inversion of the alloyed layer conductivity type, that is caused by simultaneous introduction of donor type defects, the concentration of which exceeds in 1.5-2 value order the concentration of acceptor admixture