Published November 2004
| Version v1
Journal article
Initial study of pulsed γ total dose effect in CMOS devices
- 1. Northwest Inst. of Nuclear Technology, Xi'an (China)
Description
The time-dependent radiation effect experiment of pulsed total dose in some CMOS device was carried out following Qiangguang-I accelerator irradiations. These studies were as follows: the time dependence of threshold voltage shift after short pulse; variation of initial threshold voltage shift for different gate bias during irradiation; the differences of transient and 60Co γ steady total dose effect in NMOSFET and PMOSFET. The experiment results were analysed using recombination model, the tunneling annealing model of oxide trapped charges and the two-stage model of interface states buildup. (authors)
Additional details
Publishing Information
- Journal Title
- Nuclear Electronics and Detection Technology
- Journal Volume
- 24
- Journal Issue
- 6
- Journal Page Range
- p. 745-748
- ISSN
- 0258-0934
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 39002152
- Subject category
- S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- COBALT 60; DOSE RATES; GAMMA RADIATION; MOSFET; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SEMICONDUCTOR DEVICES; TIME DEPENDENCE
- Descriptors DEC
- BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; COBALT ISOTOPES; DOSES; ELECTROMAGNETIC RADIATION; FIELD EFFECT TRANSISTORS; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTOPES; IONIZING RADIATIONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MINUTES LIVING RADIOISOTOPES; MOS TRANSISTORS; NUCLEI; ODD-ODD NUCLEI; RADIATION EFFECTS; RADIATIONS; RADIOISOTOPES; SEMICONDUCTOR DEVICES; TRANSISTORS; YEARS LIVING RADIOISOTOPES
Optional Information
- Notes
- 5 figs., 2 tabs., 5 refs.