Deviation of IR radiation in n-InSb at the thermal-electric instability in a magnetic field
Description
The paper deals with a process of S-shaped current voltage characteristic VC) formation, on heating an electronic indium antimonide sample by means of direct electric current in the presence of external stationary magnetic field. While analysing the current-voltage characteristic of the sample, the temperature dependence of the forbidden zone width, charge carrier concentration, mobility and heat transfer are taken into account. The concentration spatial distribution over the sample cross section, obtained as a result of heat transfer equation integration, is used for the analysis of IR radiation angle of deflection in indium antimonide. Experimental and theoretical investigations of current dependence of the deflection angle with respect to the order of magnitude correspond to each other and indicate the possibility of utilizing temperature instability while designing IR radiation laser deflectors
Additional details
Additional titles
- Original title (Russian)
- Отклонение IK-излучения в н-InSb при температурно-электрической неустойчивости в магнитном поле
Publishing Information
- Journal Title
- Izv. Vyssh. Uchebn. Zaved., Fiz.
- Journal Volume
- 27
- Journal Issue
- 11
- Series
- Izv. Vyssh. Uchebn. Zaved., Fiz.
- Journal Page Range
- 35-40
- ISSN
- 0021-3411
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 16057303
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANGULAR DISTRIBUTION; ANTIMONIDES; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRON DENSITY; HEAT TRANSFER; INDIUM COMPOUNDS; INFRARED RADIATION; LOW TEMPERATURE; MAGNETIC FIELDS; MEDIUM TEMPERATURE; N-TYPE CONDUCTORS; SPATIAL DISTRIBUTION; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ANTIMONY COMPOUNDS; DISTRIBUTION; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ENERGY TRANSFER; MATERIALS; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR MATERIALS
Optional Information
- Notes
- For English translation see the journal Soviet Physics Journal (USA).