Electronic structure of YBa2Cu3O7-xFx(x=1,2,3) films

Electronic stucture of YBa2Cu3O7-xFx(x=1,2,3) thin films has benn investigated by the linearized augmented plane wave method. For each film total and local partial densities of electronic states (DES) have been calculated. Replacement of oxygen atoms by fluorine atoms in the Ba-O layer in the film unit cell results in increases of the value of DES Fermi level, and also in changes in the shape of the local DES's for copper and oxygen atoms. Replacement of O by F in the layer formed by one-dimensional Cu-O chains does not influence on the electronic structure