Published March 15, 2004 | Version v1
Journal article

Investigations on hardness of rf sputter deposited SiCN thin films

Description

Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a rf magnetron sputtering system using a SiC target. Films with various compositions were deposited on to silicon substrate by changing the N2/Ar gas ratios during sputtering. Nano-indentation studies were performed to investigate the mechanical properties of the SiCN films. Surface morphology of the films was characterized by using Atomic Force Microscope. X-ray Photoelectron Spectroscopy (XPS) data indicated that the chemical status is highly sensitive to the nitrogen ratios during sputtering

Additional details

Identifiers

DOI
10.1016/j.msea.2003.09.103;
PII
S0921509303010724;

Publishing Information

Journal Title
Materials Science and Engineering. A, Structural Materials: Properties, Microstructure and Processing
Journal Volume
368
Journal Issue
1-2
Journal Page Range
p. 103-108
ISSN
0921-5093
CODEN
MSAPE3

Optional Information

Copyright
Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.