Published March 15, 2004
| Version v1
Journal article
Investigations on hardness of rf sputter deposited SiCN thin films
Creators
Description
Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a rf magnetron sputtering system using a SiC target. Films with various compositions were deposited on to silicon substrate by changing the N2/Ar gas ratios during sputtering. Nano-indentation studies were performed to investigate the mechanical properties of the SiCN films. Surface morphology of the films was characterized by using Atomic Force Microscope. X-ray Photoelectron Spectroscopy (XPS) data indicated that the chemical status is highly sensitive to the nitrogen ratios during sputtering
Additional details
Identifiers
- DOI
- 10.1016/j.msea.2003.09.103;
- PII
- S0921509303010724;
Publishing Information
- Journal Title
- Materials Science and Engineering. A, Structural Materials: Properties, Microstructure and Processing
- Journal Volume
- 368
- Journal Issue
- 1-2
- Journal Page Range
- p. 103-108
- ISSN
- 0921-5093
- CODEN
- MSAPE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38073418
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; HARDNESS; MORPHOLOGY; NITRIDES; NITROGEN; SILICON; SILICON CARBIDES; SPUTTERING; SUBSTRATES; SURFACES; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; ELECTRON SPECTROSCOPY; ELEMENTS; FILMS; MECHANICAL PROPERTIES; MICROSCOPY; NITROGEN COMPOUNDS; NONMETALS; PHOTOELECTRON SPECTROSCOPY; PNICTIDES; SEMIMETALS; SILICON COMPOUNDS; SPECTROSCOPY
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.