Electroreflection modulation spectroscopy studies of a near-surface layer in semiconductors and semiconductor-based structures

The possibility for the electroreflection modulation spectroscopy to be applied for studying the electronic parameters of the surface of semiconductors and semiconductor-based structures, as well as the electrolyte-semiconductor and metal-semiconductor interfaces, has ben demonstrated. Making use of the polarization (tensor) anisotropy of the electrooptical effect, the surface and bulk contributions to the electroreflection signal have been separated