Published August 1, 2020 | Version v1
Journal article Metadata-only

Thermal stability of magnetron sputtering Ge–Ga–S films

Creators

  • 1. Laboratory of Infrared Materials and Devices & Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Research Institute of Advanced Technology, Ningbo University, Ningbo 315211 (China)

Description

Ge–Ga–S thin films were deposited by magnetron sputtering with mean coordination number (MCN) ranging from 2.46 to 2.94. The physical properties of the Ge–Ga–S films, including optical band gap, refractive index, and thickness, vary with the time of heat treatment. Based on the analysis of the topology model, it is concluded that the Ge–Ga–S thin films with components close to the stoichiometric ratio can form the most Ga–S bonds and Ga–S bonds, and the physical properties of the Ge27.3Ga6.3S66.3 (MCN = 2.62) film are the most stable. This is an important reference for thin film photonic devices. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/aba273

Additional details

Identifiers

DOI
10.1088/1674-1056/aba273;

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
29
Journal Issue
8
Journal Page Range
[4 p.]
ISSN
1674-1056

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
54107650
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
COORDINATION NUMBER; GALLIUM; GERMANIUM; HEAT TREATMENTS; MAGNETRONS; REFRACTIVE INDEX; SPUTTERING; STOICHIOMETRY; SULFUR; THICKNESS; THIN FILMS
Descriptors DEC
DIMENSIONS; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; METALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; NONMETALS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES