Published April 2013
| Version v1
Journal article
Electrical properties of semiconductor quantum dots
- 1. State University, Educational-Research-Production Complex (Russian Federation)
Description
A method, which makes it possible to obtain semiconductor particles V ≈ 10−20 cm3 in volume (quantum dots) with a concentration of up to 1011 cm−2 and electrical contacts to each of them, is suggested. High variability in the electrical properties of such particles from a metal oxide (CuO or NiO) after the chemisorption of gas molecules is found.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 47
- Journal Issue
- 4
- Journal Page Range
- p. 494-500
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44063349
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHEMISORPTION; COPPER OXIDES; ELECTRIC CONTACTS; ELECTRICAL PROPERTIES; NICKEL OXIDES; PARTICLES; QUANTUM DOTS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL REACTIONS; COPPER COMPOUNDS; ELECTRICAL EQUIPMENT; EQUIPMENT; MATERIALS; NANOSTRUCTURES; NICKEL COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEPARATION PROCESSES; SORPTION; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2013 Pleiades Publishing, Ltd.