Influence of laser irradiation on the surface IR-photoeffects in silicon

Spectral dependences of the surface photoconductivity and surface photo-emf have been studied within 0.5-1.1 eV on real and gold-doped p-type silicon surfaces before and after the laser irradiation of the samples. It is shown that after the action of individual pulses of a ruby laser (λ=684 nm, τu=20 ns) with energy of Eu=70mJ/cm2 (one order lower than the silicon melting threshold) the IR-photoconductivity and concentration of photosensitive defects. Alternatively, after the laser irradiation of gold-doped samples the magnitudes of the IR-photoconductivity and IR-photo-emf are decreased due to rupture of photosensitive bonds Au-Si, formed upon the silicon surface doping with gold