Published 1988
| Version v1
Miscellaneous
Defect formation in epitaxial layers and stretced p-n junctions on the basis of InSb
Creators
- 1. Gosudarstvennyj Inst. Redkikh Metallov, Moscow (USSR)
Description
Short note. 1 fig
Additional details
Additional titles
- Original title (Russian)
- Дефектообразование в эпитаксиальных слоях и тянутых п-н переходах на основе InSb
Publishing Information
- Imprint Title
- Crystal growth from solution. Growth of monocrystals and films of high-temperature superconductors. V. 2
- Imprint Pagination
- 451 p.
- Journal Page Range
- p. 357-358.
- Report number
- INIS-SU--129
Conference
- Title
- 7. All-union conference on crystal growth. Symposium on molecular beam epitaxy.
- Dates
- 14-19 Nov 1988.
- Place
- Moscow (USSR).
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 20074797
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANTIMONIDES; CRYSTAL DEFECTS; CZOCHRALSKI METHOD; EPITAXY; HIGH TEMPERATURE; INDIUM COMPOUNDS; LAYERS; P-N JUNCTIONS; SUBSTRATES; THICKNESS
- Descriptors DEC
- ANTIMONY COMPOUNDS; CRYSTAL STRUCTURE; DIMENSIONS; SEMICONDUCTOR JUNCTIONS
Optional Information
- Notes
- Imprint:T-14352.;Rost kristallov iz rastvorov. Vyrashchivanie monokristallov i plenok vysokotemperaturnykh sverkhprovodnikov. Tom 2.;Rasshirennye tezisy.