Published December 31, 2003 | Version v1
Journal article

Effect of high hydrostatic pressure on small oxygen-related clusters in silicon: LVM studies

Description

Local vibrational mode (LVM) spectroscopy is used to explore the effect of high hydrostatic pressure (HP) on the formation of small oxygen-related clusters (dimers, trimers, thermal donors, and C-O complexes) at 450 deg. C and 650 deg. C in Cz-Si crystals with different impurity content and prehistory. It is found, in agreement with previous studies, that HP enhances the oxygen clustering in Cz-Si at elevated temperatures. The effect of HP is related mainly to enhancement in the diffusivity of single oxygen atoms and small oxygen aggregates. HP does not noticeably increase the binding energies of the most simple oxygen related complexes like O2i, CsOni. The biggest HP effect on the thermal double donor (TDDs) generation is revealed in hydrogenated samples. Heat-treatment of such samples at 450 deg. C under HP results in extremely high TDD introduction rates as well as in a strong increase in the concentration of the first TDD species

Additional details

Identifiers

DOI
10.1016/j.physb.2003.09.134;
PII
S092145260300783X;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
340-342
Journal Issue
3-4
Journal Page Range
p. 565-569
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
22. international conference on defects in semiconductors
Dates
28 Jul - 1 Aug 2003
Place
Aarhus (Denmark)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37000624
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ATOMS; BINDING ENERGY; CRYSTALS; DIMERS; HEAT TREATMENTS; IMPURITIES; OXYGEN; OXYGEN COMPLEXES; PRESSURE DEPENDENCE; SILICON; SPECTROSCOPY
Descriptors DEC
COMPLEXES; ELEMENTS; ENERGY; NONMETALS; SEMIMETALS

Optional Information

Copyright
Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.