Published July 7, 2010 | Version v1
Journal article

Study of dynamic processes on semiconductor surfaces using time-resolved scanning tunneling microscopy

  • 1. Physical Aspects of Nanoelectronics and Solid State Physics, MESA Institute for Nanotechnology, University of Twente, PO Box 217, 7500 AE Enschede (Netherlands)

Description

The time resolution of a conventional scanning tunneling microscope can be improved by many orders of magnitude by recording open feedback loop current-time traces. The enhanced time resolution comes, however, at the expense of the ability to obtain spatial information. In this paper, we first consider the Ge(111)-c(2 x 8) surface as an example of how surface dynamics can show up in conventional STM images. After a brief introduction to the time-resolved scanning tunneling microscopy technique, its capabilities will be demonstrated by addressing the dynamics of a dimer pair of a Pt modified Ge(001).

Availability note (English)

Available from http://dx.doi.org/10.1088/0953-8984/22/26/264007

Additional details

Identifiers

DOI
10.1088/0953-8984/22/26/264007;
PII
S0953-8984(10)43567-5;

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
22
Journal Issue
26
Journal Page Range
[6 p.]
ISSN
0953-8984
CODEN
JCOMEL