Published December 2015 | Version v1
Book

Digital pulse shape analysis for charged particle identification with a nTD silicon detector and 1 GHz sampling digitizer

  • 1. Nuclear Physics Division, Bhabha Atomic Research Centre, Mumbai (India)

Description

As a result, the pulse shape depends on the charge, mass and energy of the incident ion. If the particles are injected from the rear side, where the electric field is low, the heavier ions will be stopped nearer to the entrance creating denser plasma there as compared to the lighter ions. As a result both the plasma erosion time and the drift time will be larger for heavier ions as compared to the lighter ions. Thus the rear side injection make the PSA technique more sensitive. However, particle identification using PSA required highly uniform resistivity Si crystal and fast pulse processing. Earlier we have reported PI for 6,7Li using PSA technique with a nTD Si detector and a indigenously developed FPGA based digitizer. In the present experiment we have extended the measurement for heavier ions

Part of:
Proceedings of the DAE-BRNS symposium on nuclear physics. V. 60

Additional details

Publishing Information

Publisher
Bhabha Atomic Research Centre
Imprint Place
Mumbai (India)
Imprint Title
Proceedings of the DAE-BRNS symposium on nuclear physics. V. 60
Imprint Pagination
1139 p.
Journal Page Range
p. 1042-1043

Conference

Title
60. DAE-BRNS symposium on nuclear physics
Dates
7-11 Dec 2015
Place
Prasanthi Nilayam (India)

INIS

Country of Publication
India
Country of Input or Organization
India
INIS RN
47077706
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CHARGED PARTICLE DETECTION; DIGITAL SYSTEMS; PULSE ANALYZERS; SI SEMICONDUCTOR DETECTORS
Descriptors DEC
DETECTION; ELECTRONIC EQUIPMENT; EQUIPMENT; MEASURING INSTRUMENTS; RADIATION DETECTION; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS

Optional Information

Notes
4 refs., 1 fig.