Published October 16, 1980
| Version v1
Journal article
Impact ionization of excited states of shallow impurities in n-InSb
Creators
- 1. Ludwig Boltzmann Inst., Vienna (Austria)
- 2. Vienna Univ. (Austria)
Description
At a temperature of 0.37 K structures are observed in the current-voltage characteristics of n-InSb (Nsub(I) = 3 x 1015 cm-3) at electric fields in the range 1 to 10 V/cm and at magnetic fields above 7 T. This is related to the impact ionization of excited impurity levels. The disappearence of this structure at lower magnetic fields and at higher temperatures is explained by an increasing broadening of the impurity energy levels with increasing temperature. (author)
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 61
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 531-535
- ISSN
- 0031-8965
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 12593546
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANTIMONIDES; BINDING ENERGY; BREAKDOWN; CURRENT DENSITY; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; EXCITED STATES; GROUND STATES; IMPURITIES; INDIUM COMPOUNDS; IONIZATION; MAGNETIC FIELDS; N-TYPE CONDUCTORS; PHOTOCONDUCTIVITY; ULTRALOW TEMPERATURE
- Descriptors DEC
- ANTIMONY COMPOUNDS; ELECTRICAL PROPERTIES; ENERGY; ENERGY LEVELS; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS