Quasichemical reactions involving point defects in irradiated semiconductors

This survey is devoted to the description of processes occurring in semiconductors under the influence of nuclear radiation, regarding these as a combination of quasichemical reactions between point defects in crystals. Such a treatment is known to be justified irrespective of radiation studies. Peculiarities of quasichemical reactions in semiconductors involving the radiation defects mentioned make traditional approaches inapplicable for their description when stable reaction product concentrations are determined as functions of time in terms of reaction cross-sections treated as standard parameters for the given substance. To clarify which parameters characterize the accumulation of various defect species in irradiated semiconductors, to find these parameters, and to apply them in the study of reactions involving point defects is the final purpose of this survey. (Auth.)