Separation of interlayer resistance in multilayer MoS2 field-effect transistors

We extracted the interlayer resistance between two layers in multilayer molybdenum disulfide (MoS2) field-effect transistors by confirming that contact resistances (Rcontact) measured using the four-probe measurements were similar, within ∼30%, to source/drain series resistances (Rsd) measured using the two-probe measurements. Rcontact values obtained from gated four-probe measurements exhibited gate voltage dependency. In the two-probe measurements, the Y-function method was applied to obtain the Rsd values. By comparing those two Rcontact (∼9.5 kΩ) and Rsd (∼12.3 kΩ) values in strong accumulation regime, we found the rationality that those two values had nearly the same properties, i.e., the Schottky barrier resistances and interlayer resistances. The Rsd values of devices with two-probe source/drain electrodes exhibited thickness dependency due to interlayer resistance changes. The interlayer resistance between two layers was also obtained as ∼2.0 Ω mm.