Published September 2005
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Optical-electronic properties of periodical structures nGaAs1-xPx-nGaAs
Description
no abstract available
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38111285.pdf
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Additional details
Additional titles
- Original title (Russian)
- Оптоэлектронные своыства nGaAs
Publishing Information
- Publisher
- Academy of Sciences of Republic Uzbekistan
- Imprint Place
- Tashkent (Uzbekistan)
- Imprint Title
- Materials of the conference on 'Physics in Uzbekistan'
- Imprint Pagination
- 172 p.
- Journal Page Range
- p. 68-69
- Report number
- INIS-UZ--122
Conference
- Title
- Conference on 'Physics in Uzbekistan' dedicated to 'Year of Physics'
- Original Conference Title
- Konferentsiya 'Fizika v Uzbekistane' posveshchennaya 'Godu fiziki-2005'
- Dates
- 27-28 Sep 2005
- Place
- Tashkent (Uzbekistan)
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 38111285
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference
- Descriptors DEI
- DOPED MATERIALS; GALLIUM ARSENIDES; LIGHT TRANSMISSION; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHOSPHORUS; PHOTOCURRENTS; PHOTOSENSITIVITY; PHOTOVOLTAIC EFFECT; VAPOR PHASE EPITAXY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; CURRENTS; ELECTRIC CURRENTS; ELEMENTS; EPITAXY; GALLIUM COMPOUNDS; MATERIALS; NONMETALS; PHOTOELECTRIC EFFECT; PNICTIDES; SEMICONDUCTOR MATERIALS; SENSITIVITY; TRANSMISSION
Optional Information
- Notes
- 2 refs. Imprint:Materialy konferentsii 'Fizika v Uzbekistane'. Posveshchaetsya 'Godu fiziki-2005'