Preliminary results for the design, fabrication, and performance of a backside-illuminated avalanche drift detector
Creators
- 1. The Key Laboratory of Beam Technology and Materials Modification of the Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875 (China)
Description
The detection of low-level light is a key technology in various experimental scientific studies. As a photon detector, the silicon photomultiplier (SiPM) has gradually become an alternative to the photomultiplier tube (PMT) in many applications in high-energy physics, astroparticle physics, and medical imaging because of its high photon detection efficiency (PDE), good resolution for single-photon detection, insensitivity to magnetic field, low operating voltage, compactness, and low cost. However, primarily because of the geometric fill factor, the PDE of most SiPMs is not very high; in particular, for those SiPMs with a high density of micro cells, the effective area is small, and the bandwidth of the light response is narrow. As a building block of the SiPM, the concept of the backside-illuminated avalanche drift detector (ADD) was first proposed by the Max Planck Institute of Germany eight years ago; the ADD is promising to have high PDE over the full energy range of optical photons, even ultraviolet light and X-ray light, and because the avalanche multiplication region is very small, the ADD is beneficial for the fabrication of large-area SiPMs. However, because of difficulties in design and fabrication, no significant progress had been made, and the concept had not yet been verified. In this paper, preliminary results in the design, fabrication, and performance of a backside-illuminated ADD are reported; the difficulties in and limitations to the backside-illuminated ADD are analyzed. (interdisciplinary physics and related areas of science and technology)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-1056/22/10/108504Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics. B
- Journal Volume
- 22
- Journal Issue
- 10
- Journal Page Range
- [7 p.]
- ISSN
- 1674-1056
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46066920
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- DESIGN; EFFICIENCY; ELECTRIC POTENTIAL; ENERGY RANGE; FABRICATION; FILL FACTORS; GAMMA DETECTION; HIGH ENERGY PHYSICS; MAGNETIC FIELDS; PHOTOMULTIPLIERS; PHOTONS; RESOLUTION; SI SEMICONDUCTOR DETECTORS; SILICON; TOWNSEND DISCHARGE; ULTRAVIOLET RADIATION; VISIBLE RADIATION; X RADIATION; X-RAY DETECTION
- Descriptors DEC
- BOSONS; DETECTION; DIMENSIONLESS NUMBERS; ELECTRIC DISCHARGES; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; IONIZING RADIATIONS; MASSLESS PARTICLES; MEASURING INSTRUMENTS; PHOTOTUBES; PHYSICS; RADIATION DETECTION; RADIATION DETECTORS; RADIATIONS; SEMICONDUCTOR DETECTORS; SEMIMETALS