Published May 1980
| Version v1
Journal article
Ion-ion emission relaxation effect on Si(111) surface bombardment
Creators
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Наблюдение эффекта релаксации ионно-ионной эмиссии при бомбардировке поверхности Си(111)
Publishing Information
- Journal Title
- Fiz. Tverd. Tela
- Journal Volume
- 22
- Journal Issue
- 5
- Series
- Fiz. Tverd. Tela.
- Journal Page Range
- 1541-1543
- ISSN
- 0367-3294
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 12574354
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; ARGON IONS; ENERGY DEPENDENCE; HIGH TEMPERATURE; ION EMISSION; KEV RANGE 10-100; MONOCRYSTALS; RELAXATION; SECONDARY EMISSION; SILICON; SURFACES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CHARGED PARTICLES; CRYSTALS; ELEMENTS; EMISSION; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; SEMIMETALS
Optional Information
- Notes
- Short note; for English translation see the journal Soviet Physics - Solid State (USA).