Published June 30, 2003
| Version v1
Journal article
Depth profiling of oxynitride film formed on Si(1 0 0) by photon energy dependent photoelectron spectroscopy
Description
Si 2p and N 1s spectra arising from a oxynitride film formed on Si(1 0 0) surface were measured in the photon energy range from 556 to 1471 eV, where the electron escape depth in SiO2 changes from 1.68 to 3.80 nm. It was found for the first time that the photon energy dependence of N 1s and Si 2p photoelectron spectra can be nearly reproduced if the depth profile of nitrogen atoms is known
Additional details
Identifiers
- DOI
- 10.1016/S0169-4332(03)00389-1;
- arXiv
- arXiv:0808.1402v5;
- PII
- S0169433203003891;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 216
- Journal Issue
- 1-4
- Journal Page Range
- p. 287-290
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- 4. international symposium on the control of semiconductor interfaces
- Dates
- 21-25 Oct 2002
- Place
- Karuizawa (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38086756
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRONS; ENERGY DEPENDENCE; EV RANGE 100-1000; FILMS; NITRIDES; NITROGEN; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHOTONS; SILICON; SILICON OXIDES; SURFACES; SYNCHROTRON RADIATION
- Descriptors DEC
- BOSONS; BREMSSTRAHLUNG; CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; EV RANGE; FERMIONS; LEPTONS; MASSLESS PARTICLES; NITROGEN COMPOUNDS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; RADIATIONS; SEMIMETALS; SILICON COMPOUNDS; SPECTROSCOPY
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.