Published November 2015
| Version v1
Journal article
Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy
Creators
- 1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
- 2. Lobachevsky State University of Nizhny Novgorod (Russian Federation)
Description
Influence of the Ge layer thickness and annealing conditions on the parameters of relaxed Ge/Si(001) layers grown by molecular beam epitaxy via two-stage growth is investigated. The dependences of the threading dislocation density and surface roughness on the Ge layer thickness, annealing temperature and time, and the presence of a hydrogen atmosphere are obtained. As a result of optimization of the growth and annealing conditions, relaxed Ge/Si(001) layers which are thinner than 1 μm with a low threading dislocation density on the order of 107 cm–2 and a root mean square roughness of less than 1 nm are obtained
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 49
- Journal Issue
- 11
- Journal Page Range
- p. 1415-1420
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47039488
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CRYSTAL GROWTH; DISLOCATIONS; GERMANIUM; HYDROGEN; LAYERS; MOLECULAR BEAM EPITAXY; OPTIMIZATION; ROUGHNESS; SILICON; SURFACES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELEMENTS; EPITAXY; HEAT TREATMENTS; LINE DEFECTS; METALS; NONMETALS; SEMIMETALS; SURFACE PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2015 Pleiades Publishing, Ltd.