Published 2000 | Version v1
Miscellaneous Metadata-only

Development of IEGT switch for a klystron modulator

Creators

  • 1. Toshiba Corp. Information and Industrial Systems and Services Company, Fuchu, Tokyo (Japan)
  • 2. Toshiba Corp. Power Systems and Services Company, Yokohama, Kanagawa (Japan)
  • 3. Japan Synchrotron Radiation Research Inst. (JASRI/SPring-8), Mikazuki, Hyogo (Japan)

Description

To replace a thyratron, which is used in a klystron modulator, we developed a high voltage switch utilizing IEGT (Injection Enhanced Gate bipolar Transistor), which is recently developed semiconductor power device. We confirmed that an IEGT device successfully conducted current of almost 6 kA and that the IEGT switch had satisfactory performance. (author)

Part of:
Proceedings of the 25th linear accelerator meeting in Japan

Additional details

Publishing Information

Imprint Title
Proceedings of the 25th linear accelerator meeting in Japan
Imprint Pagination
446 p.
Journal Page Range
p. 243-245

Conference

Title
25. linear accelerator meeting in Japan
Dates
12-14 Jul 2000
Place
Himeji, Hyogo (Japan)

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
32008652
Subject category
S43: PARTICLE ACCELERATORS;
Resource subtype / Literary indicator
Conference, Non-conventional Literature
Descriptors DEI
ELECTRICAL TRANSIENTS; ENERGY EFFICIENCY; FABRICATION; KLYSTRONS; MODIFICATIONS; MODULATION; MOSFET; PERFORMANCE TESTING; SEMICONDUCTOR SWITCHES; SPECIFICATIONS; TIME DEPENDENCE
Descriptors DEC
EFFICIENCY; ELECTRICAL EQUIPMENT; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; FIELD EFFECT TRANSISTORS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; MOS TRANSISTORS; SEMICONDUCTOR DEVICES; SWITCHES; TESTING; TRANSIENTS; TRANSISTORS; VOLTAGE DROP

Optional Information

Notes
8 figs.