Published May 1996
| Version v1
Journal article
Identification of one- and two-electron impurity centers in semiconductors by Moessbauer spectroscopy
- 1. Sankt-Peterburgskij Gosudarstvennyj Tekhnicheskij Univ., Sankt-Peterburg (Russian Federation)
Description
The 57 Fe and 119 Sn Moessbauer spectroscopies showed the dependence of the impurity charge state on the Fermi level position within the forbidden gap of the semiconductor for iron impurity atoms in A3B5 compounds (GaAs, GaP) as well as for tin impurities in the lead (PbS, PbSe, PbTe) and indium (In2S3) chalcogenides. Neutral and ionized states of the impurities have been identified. 18 refs., 6 figs
Additional details
Additional titles
- Original title (Russian)
- Идентификация одно- и двухэлектронных примесных центров в полупроводн иках методом мессбауэровской спектроскопии
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 30
- Journal Issue
- 5
- Journal Page Range
- p. 840-851.
- ISSN
- 0015-3222
- CODEN
- FTPPA4
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 28044527
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHALCOGENIDES; CHARGE STATES; CONCENTRATION RATIO; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; EMISSION SPECTRA; GALLIUM COMPOUNDS; HUBBARD MODEL; INDIUM COMPOUNDS; INTERSTITIALS; IRON ADDITIONS; ISOMERIC TRANSITIONS; LEAD COMPOUNDS; MEASURING METHODS; MOESSBAUER EFFECT; PNICTIDES; SEMICONDUCTOR MATERIALS; SOLID SOLUTIONS; TIN ADDITIONS
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL MODELS; CRYSTAL STRUCTURE; DISPERSIONS; ELECTRICAL PROPERTIES; ENERGY-LEVEL TRANSITIONS; HOMOGENEOUS MIXTURES; MATERIALS; MATHEMATICAL MODELS; MIXTURES; PHYSICAL PROPERTIES; POINT DEFECTS; SOLUTIONS; SPECTRA