Published August 2000
| Version v1
Journal article
Radiation defects in n-6H-SiC irradiated with 8 MeV protons
Creators
- 1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021 (Russian Federation)
- 2. St. Petersburg State Technical University, Politekhnicheskaya ul. 29, St. Petersburg, 195251 (Russian Federation)
Description
Capacitance methods and electron spin resonance (ESR) were applied to study deep centers in n-6H-SiC irradiated with 8 MeV protons. Schottky diodes and p-n structures grown by sublimation epitaxy or commercially produced by CREE Inc. (United States) were used. The type of the irradiation-induced centers is independent of the material fabrication technology and the kind of charged particles used. Irradiation results in an increase in the total concentration of donor centers. The possible structure of the centers is suggested on the basis of data on defect annealing and ESR
Additional details
Identifiers
- DOI
- 10.1134/1.1188089;
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 34
- Journal Issue
- 8
- Journal Page Range
- p. 861-866
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35051891
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data, Translation
- Descriptors DEI
- ANNEALING; CAPACITANCE; CRYSTAL DEFECTS; ELECTRON SPIN RESONANCE; EXPERIMENTAL DATA; HYDROGEN COMPOUNDS; MEV RANGE 01-10; P-N JUNCTIONS; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; VAPOR PHASE EPITAXY
- Descriptors DEC
- BEAMS; CARBIDES; CARBON COMPOUNDS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DATA; ELECTRICAL PROPERTIES; ENERGY RANGE; EPITAXY; HEAT TREATMENTS; INFORMATION; MAGNETIC RESONANCE; MATERIALS; MEV RANGE; NUCLEON BEAMS; NUMERICAL DATA; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION EFFECTS; RESONANCE; SEMICONDUCTOR JUNCTIONS; SILICON COMPOUNDS
Optional Information
- Notes
- Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 34, 897-902 (No. 8, 2000); (c) 2000 MAIK ''Nauka / Interperiodica''.