TEM observations in Si: An attempt to link deformation microstructures and electrical activity

The deformation microstructures of Si single crystals have been studied by transmission electron microscopy (TEM) in the temperature range of deformation where 'dislocation trails' are evidenced. The main features of the deformation microstructures are characterized by dislocations dipoles and their debris. These microscopic observations are discussed in relation with the mesoscopic properties of dislocation trails as well as the possible transformation between two different core structures of dislocations in silicon.