Published April 1997 | Version v1
Miscellaneous Open

Investigation of the processes of radiation defects formation in silicon structures with different geometrical sizes

  • 1. AH RU Tashkent (Uzbekistan). Int. Yadernoj Fiziki

Description

In this work the formation of radiation defects in silicon structures in dependence of the base thickness containing thermo-vacancies and Frenkel type defects after electron irradiation was theoretically analyzed. The expressions for the concentrations of divacancies, A-centers and E-centers were obtained and it was concluded that when p-n junction square is not changed the concentration of radiation defects decreased with structure base growth

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Part of:
Abstracts of the International conference 'Problems of theoretical physics and physics of solid state'

Additional details

Additional titles

Original title (Russian)
Исследование процессов образования радиационных дефектов в кремниевых структурах с различными геометрическими размерами

Publishing Information

Imprint Title
Abstracts of the International conference 'Problems of theoretical physics and physics of solid state'
Imprint Pagination
177 p.
Journal Page Range
p. 72
Report number
INIS-UZ--063

Conference

Title
International conference on problems of theoretical physics and physics of solid state
Dates
24-26 Apr 1997
Place
Bukhara (Uzbekistan)

INIS

Optional Information

Notes
Imprint:Tezisy dokladov Mezhdunarodnoj konferentsii 'Problemy teoreticheskoj fiziki i fiziki tverdogo tela'