Published April 1997
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Investigation of the processes of radiation defects formation in silicon structures with different geometrical sizes
- 1. AH RU Tashkent (Uzbekistan). Int. Yadernoj Fiziki
Description
In this work the formation of radiation defects in silicon structures in dependence of the base thickness containing thermo-vacancies and Frenkel type defects after electron irradiation was theoretically analyzed. The expressions for the concentrations of divacancies, A-centers and E-centers were obtained and it was concluded that when p-n junction square is not changed the concentration of radiation defects decreased with structure base growth
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Additional details
Additional titles
- Original title (Russian)
- Исследование процессов образования радиационных дефектов в кремниевых структурах с различными геометрическими размерами
Publishing Information
- Imprint Title
- Abstracts of the International conference 'Problems of theoretical physics and physics of solid state'
- Imprint Pagination
- 177 p.
- Journal Page Range
- p. 72
- Report number
- INIS-UZ--063
Conference
- Title
- International conference on problems of theoretical physics and physics of solid state
- Dates
- 24-26 Apr 1997
- Place
- Bukhara (Uzbekistan)
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 30032477
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- A CENTERS; E CENTERS; ELECTRON BEAMS; FRENKEL DEFECTS; INTERSTITIALS; P-N JUNCTIONS; PHYSICAL RADIATION EFFECTS; RECOMBINATION; SILICON
- Descriptors DEC
- BEAMS; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; LEPTON BEAMS; PARTICLE BEAMS; POINT DEFECTS; RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; VACANCIES
Optional Information
- Notes
- Imprint:Tezisy dokladov Mezhdunarodnoj konferentsii 'Problemy teoreticheskoj fiziki i fiziki tverdogo tela'